Invention Grant
- Patent Title: Processing with reduced line end shortening ratio
- Patent Title (中): 处理缩短了线端缩短率
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Application No.: US11843629Application Date: 2007-08-22
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Publication No.: US08394724B2Publication Date: 2013-03-12
- Inventor: Hai Cong , Wei Loong Loh , Krishan Gopal , Xin Zhang , Mei Sheng Zhou , Pradeep Ramachandramurthy Yelehanka
- Applicant: Hai Cong , Wei Loong Loh , Krishan Gopal , Xin Zhang , Mei Sheng Zhou , Pradeep Ramachandramurthy Yelehanka
- Applicant Address: SG Singapore
- Assignee: Globalfoundries Singapore Pte. Ltd.
- Current Assignee: Globalfoundries Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte. Ltd.
- Main IPC: H01L21/312
- IPC: H01L21/312

Abstract:
A method for forming device features with reduced line end shortening (LES) includes trimming the device feature to achieve the desired sub-ground rule critical dimension during the etch to form the device feature.
Public/Granted literature
- US20080054477A1 Processing with Reduced Line End Shortening Ratio Public/Granted day:2008-03-06
Information query
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