Invention Grant
- Patent Title: Systems and methods for forming metal oxide layers
- Patent Title (中): 用于形成金属氧化物层的系统和方法
-
Application No.: US13249544Application Date: 2011-09-30
-
Publication No.: US08394725B2Publication Date: 2013-03-12
- Inventor: Brian A. Vaartstra , Timothy A. Quick
- Applicant: Brian A. Vaartstra , Timothy A. Quick
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
Public/Granted literature
- US20120021587A1 Systems and Methods for Forming Metal Oxide Layers Public/Granted day:2012-01-26
Information query
IPC分类:
