Film deposition method and manufacturing method of semiconductor device

Invention Grant

US08394728B2 Film deposition method and manufacturing method of semiconductor device 失效

Title translation: 半导体器件的薄膜沉积方法和制造方法

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Patent Title: Film deposition method and manufacturing method of semiconductor device
Patent Title (中): 半导体器件的薄膜沉积方法和制造方法
Application No.: US12694342

Application Date: 2010-01-27
Publication No.: US08394728B2

Publication Date: 2013-03-12
Inventor: Hirotaka Akao , Yuriko Kaino , Takahiro Kamei , Masaki Hara , Kenichi Kurihara
Applicant: Hirotaka Akao , Yuriko Kaino , Takahiro Kamei , Masaki Hara , Kenichi Kurihara
Applicant Address: JP Tokyo
Assignee: Sony Corporation
Current Assignee: Sony Corporation
Current Assignee Address: JP Tokyo
Agency: SNR Denton US LLP
Priority: JP2009-023219 20090204; JP2009-216362 20090918
Main IPC: H01L21/469
IPC: H01L21/469 ; H01L21/31

Film deposition method and manufacturing method of semiconductor device

Abstract:

A film deposition method includes the steps of: coating a solution containing a polysilane compound on a substrate to form a coating film and then carrying out a first thermal treatment in an inert atmosphere, thereby forming the coating film into a silicon film; forming a coating film containing a polysilane compound on the silicon film and then carrying out a second thermal treatment in an inert atmosphere or a reducing atmosphere, thereby forming the coating film into a silicon oxide precursor film; and carrying out a third thermal treatment in an oxidizing atmosphere, thereby forming the silicon oxide precursor film into a silicon oxide film and simultaneously densifying the silicon film.

Abstract(Chinese):

膜沉积方法包括以下步骤：在基板上涂布含有聚硅烷化合物的溶液，形成涂膜，然后在惰性气氛中进行第一热处理，从而将涂膜形成硅膜; 在硅膜上形成含有聚硅烷化合物的涂膜，然后在惰性气氛或还原气氛中进行第二次热处理，从而将涂膜形成氧化硅前体膜; 并在氧化气氛中进行第三次热处理，从而将氧化硅前体膜形成为氧化硅膜，同时使硅膜致密化。

Public/Granted literature

US20100197102A1 FILM DEPOSITION METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2010-08-05

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理