Invention Grant
US08394729B2 Increasing the seebeck coefficient of semiconductors by HPHT sintering
有权
通过HPHT烧结提高半导体的Seebeck系数
- Patent Title: Increasing the seebeck coefficient of semiconductors by HPHT sintering
- Patent Title (中): 通过HPHT烧结提高半导体的Seebeck系数
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Application No.: US12306431Application Date: 2007-06-26
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Publication No.: US08394729B2Publication Date: 2013-03-12
- Inventor: Abds-Sami Malik
- Applicant: Abds-Sami Malik
- Applicant Address: US OH Worthington
- Assignee: Diamond Innovations, Inc.
- Current Assignee: Diamond Innovations, Inc.
- Current Assignee Address: US OH Worthington
- Agent Frank Gao; Maria Gasaway
- International Application: PCT/US2007/072115 WO 20070626
- International Announcement: WO2008/002910 WO 20080103
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/06
Abstract:
A method for increasing the Seebeck coefficient of a semiconductor involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the Seebeck coefficient of the semiconductor, and recovering the semiconductor with an increased Seebeck coefficient.
Public/Granted literature
- US20090272416A1 INCREASING THE SEEBECK COEFFICIENT OF SEMICONDUCTORS BY HPHT SINTERING Public/Granted day:2009-11-05
Information query
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