Invention Grant
- Patent Title: Avalanche impact ionization amplification devices
- Patent Title (中): 雪崩冲击电离放大装置
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Application No.: US13455507Application Date: 2012-04-25
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Publication No.: US08395103B2Publication Date: 2013-03-12
- Inventor: Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
- Applicant: Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/107
Abstract:
A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
Public/Granted literature
- US20120205523A1 AVALANCHE IMPACT IONIZATION AMPLIFICATION DEVICES Public/Granted day:2012-08-16
Information query
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