Invention Grant
US08395106B2 Optical semiconductor device with quantum dots having configurational anisotropy
有权
具有构造各向异性的量子点的光学半导体器件
- Patent Title: Optical semiconductor device with quantum dots having configurational anisotropy
- Patent Title (中): 具有构造各向异性的量子点的光学半导体器件
-
Application No.: US12535263Application Date: 2009-08-04
-
Publication No.: US08395106B2Publication Date: 2013-03-12
- Inventor: Minoru Doshida , Mitsuhiro Nagashima , Michiya Kibe , Hiroyasu Yamashita , Hironori Nishino , Yusuke Matsukura , Yasuhito Uchiyama
- Applicant: Minoru Doshida , Mitsuhiro Nagashima , Michiya Kibe , Hiroyasu Yamashita , Hironori Nishino , Yusuke Matsukura , Yasuhito Uchiyama
- Applicant Address: JP Tokyo JP Kanagawa
- Assignee: Technical Research & Development Institute Ministry of Defense of Japan,Fujitsu Limited
- Current Assignee: Technical Research & Development Institute Ministry of Defense of Japan,Fujitsu Limited
- Current Assignee Address: JP Tokyo JP Kanagawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-205293 20080808
- Main IPC: G02F1/01
- IPC: G02F1/01
Abstract:
An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.
Public/Granted literature
- US20100032552A1 OPTICAL SEMICONDUCTOR DEVICE Public/Granted day:2010-02-11
Information query
