Invention Grant
US08395138B2 Nonvolatile semiconductor memory having buffer layer containing nitrogen and containing carbon as main component
有权
具有含有氮并含有碳作为主要成分的缓冲层的非挥发性半导体存储器
- Patent Title: Nonvolatile semiconductor memory having buffer layer containing nitrogen and containing carbon as main component
- Patent Title (中): 具有含有氮并含有碳作为主要成分的缓冲层的非挥发性半导体存储器
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Application No.: US12545326Application Date: 2009-08-21
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Publication No.: US08395138B2Publication Date: 2013-03-12
- Inventor: Kazuhiko Yamamoto , Kazuyuki Yahiro , Tsukasa Nakai
- Applicant: Kazuhiko Yamamoto , Kazuyuki Yahiro , Tsukasa Nakai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-008192 20090116
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L29/00 ; H01L29/02 ; H01L29/04 ; H01L29/06 ; H01L31/0312 ; G11C11/00
Abstract:
A nonvolatile semiconductor memory using carbon related films as variable resistance films includes bottom electrodes formed above a substrate, buffer layers formed on the bottom electrodes and each formed of a film containing nitrogen and containing carbon as a main component, variable resistance films formed on the buffer layers and each formed of a film containing carbon as a main component and the electrical resistivity thereof being changed according to application of voltage or supply of current, and top electrodes formed on the variable resistance films.
Public/Granted literature
- US20100181546A1 NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-07-22
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