Invention Grant
US08395141B2 Compound semiconductors 有权
化合物半导体

Compound semiconductors
Abstract:
Semiconductor emitting devices that offset stresses applied to a quantum well region and reduce internal fields due to spontaneous and piezoelectric polarizations are disclosed. In one embodiment, a semiconductor emitting device includes a quantum well region comprising an active layer that emits light and at least one barrier layer disposed adjacent the active layer, a means for impressing an electric field across the quantum well region to inject carriers into the quantum well region, and a means for impressing an offset electric field across the quantum well region to offset the polarization field formed in the quantum well region.
Public/Granted literature
Information query
Patent Agency Ranking
0/0