Invention Grant
- Patent Title: Compound semiconductors
- Patent Title (中): 化合物半导体
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Application No.: US12498257Application Date: 2009-07-06
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Publication No.: US08395141B2Publication Date: 2013-03-12
- Inventor: Doyeol Ahn
- Applicant: Doyeol Ahn
- Applicant Address: KR Seoul
- Assignee: University of Seoul Industry Cooperation Foundation
- Current Assignee: University of Seoul Industry Cooperation Foundation
- Current Assignee Address: KR Seoul
- Agency: Workman Nydegger
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
Semiconductor emitting devices that offset stresses applied to a quantum well region and reduce internal fields due to spontaneous and piezoelectric polarizations are disclosed. In one embodiment, a semiconductor emitting device includes a quantum well region comprising an active layer that emits light and at least one barrier layer disposed adjacent the active layer, a means for impressing an electric field across the quantum well region to inject carriers into the quantum well region, and a means for impressing an offset electric field across the quantum well region to offset the polarization field formed in the quantum well region.
Public/Granted literature
- US20110001121A1 COMPOUND SEMICONDUCTORS Public/Granted day:2011-01-06
Information query
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