Invention Grant
US08395152B2 Stable P-type semiconducting behaviour in Li and Ni codoped ZnO
有权
在Li和Ni共掺ZnO中稳定的P型半导体行为
- Patent Title: Stable P-type semiconducting behaviour in Li and Ni codoped ZnO
- Patent Title (中): 在Li和Ni共掺ZnO中稳定的P型半导体行为
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Application No.: US13448472Application Date: 2012-04-17
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Publication No.: US08395152B2Publication Date: 2013-03-12
- Inventor: M. S. Ramachandra Rao , E. Senthil Kumar
- Applicant: M. S. Ramachandra Rao , E. Senthil Kumar
- Applicant Address: IN Chennai, Tamil Nadu
- Assignee: Indian Institute of Technology Madras
- Current Assignee: Indian Institute of Technology Madras
- Current Assignee Address: IN Chennai, Tamil Nadu
- Agency: Ren-Sheng International
- Priority: IN2054/CHE/2009 20090826
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate.
Public/Granted literature
- US20120199828A1 STABLE P-TYPE SEMICONDUCTING BEHAVIOUR IN LI AND NI CODOPED ZNO Public/Granted day:2012-08-09
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