Invention Grant
- Patent Title: Thin film transistor substrate and method of manufacturing the same
- Patent Title (中): 薄膜晶体管基板及其制造方法
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Application No.: US12816488Application Date: 2010-06-16
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Publication No.: US08395154B2Publication Date: 2013-03-12
- Inventor: Yuuki Kamata , Yuuichi Nishimura , Kunihiko Watanabe
- Applicant: Yuuki Kamata , Yuuichi Nishimura , Kunihiko Watanabe
- Applicant Address: JP Hyogo
- Assignee: Panasonic Liquid Crystal Display Co., Ltd.
- Current Assignee: Panasonic Liquid Crystal Display Co., Ltd.
- Current Assignee Address: JP Hyogo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2009-146479 20090619
- Main IPC: H01L29/04
- IPC: H01L29/04

Abstract:
In a portion of a gate signal line and a portion of a common signal line, cutouts which are arranged perpendicular to the extending direction of these lines and open to face each other in an opposed manner are formed. A cruciform shape in appearance is formed by combining a gap defined between the gate signal line and the common signal line extending parallel to each other and the cutouts to each other. The cruciform portion formed in this manner is used as an alignment mark in the exposure of a photolithography step of a layer formed later. Due to such a constitution, in manufacturing a thin film transistor substrate, it is possible to realize the highly accurate alignment without forming a pattern only used for alignment.
Public/Granted literature
- US20100320468A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-12-23
Information query
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