Invention Grant
- Patent Title: Display device
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Application No.: US13492970Application Date: 2012-06-11
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Publication No.: US08395161B2Publication Date: 2013-03-12
- Inventor: Shunpei Yamazaki , Yasuyuki Arai
- Applicant: Shunpei Yamazaki , Yasuyuki Arai
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2001-282768 20010918
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L27/108 ; H01L31/036

Abstract:
At least two TFTs which are connected with a light emitting element are provided, crystallinities of semiconductor regions composing active layers of the respective TFTs are made different from each other. As the semiconductor region, a region obtained by crystallizing an amorphous semiconductor film by laser annealing is applied. In order to change the crystallinity, a method of changing a scan direction of a continuous oscillating laser beam so that crystal growth directions are made different from each other is applied. Alternatively, a method of changing a channel length direction of TFT between the respective semiconductor regions without changing the scan direction of the continuous oscillating laser beam so that a crystal growth direction and a current flowing direction are different from each other is applied.
Public/Granted literature
- US20120249497A1 Display Device Public/Granted day:2012-10-04
Information query
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