Invention Grant
- Patent Title: Semiconductor device with multi-layer gate electrode
- Patent Title (中): 具有多层栅电极的半导体器件
-
Application No.: US12839983Application Date: 2010-07-20
-
Publication No.: US08395162B2Publication Date: 2013-03-12
- Inventor: Yuki Nakano , Ryota Nakamura , Katsuhisa Nagao
- Applicant: Yuki Nakano , Ryota Nakamura , Katsuhisa Nagao
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2009-170154 20090721; JP2009-233777 20091007; JP2010-152085 20100702
- Main IPC: H01L29/15
- IPC: H01L29/15

Abstract:
The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.
Public/Granted literature
- US20110017998A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-01-27
Information query
IPC分类: