Invention Grant
- Patent Title: Semiconductor light emitting element and method for manufacturing same
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US12878978Application Date: 2010-09-09
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Publication No.: US08395179B2Publication Date: 2013-03-12
- Inventor: Eiji Muramoto
- Applicant: Eiji Muramoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2010-055029 20100311
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
According to one embodiment, a semiconductor light emitting element includes a stacked body, a first and second electrode, a support substrate, a protective film and a dielectric film. The stacked body includes a first semiconductor, a second semiconductor layer and a light emitting portion. The first electrode is provided on a first major surface of the stacked body. The second electrode is provided on a second major surface of the stacked body. The support substrate is provided on the second major surface via a bonding metal. The protective film is provided on at least a side surface of the stacked body except the second major surface. The dielectric film is provided between the bonding metal and a region of the second major surface not provided with the second electrode, and between the bonding metal and a surface of the protective film on the second major surface side.
Public/Granted literature
- US20110220928A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME Public/Granted day:2011-09-15
Information query
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