Invention Grant
- Patent Title: Switching element
- Patent Title (中): 开关元件
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Application No.: US12140411Application Date: 2008-06-17
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Publication No.: US08395185B2Publication Date: 2013-03-12
- Inventor: Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Masayo Horikawa , Tetsuo Shimizu
- Applicant: Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Masayo Horikawa , Tetsuo Shimizu
- Applicant Address: JP Tsukuba-shi JP Tokyo JP Daito-shi
- Assignee: Funai Electric Advanced Applied Technology Research Institute Inc.,National Institute of Advanced Industrial Science and Technology,Funai Electric Co., Ltd.
- Current Assignee: Funai Electric Advanced Applied Technology Research Institute Inc.,National Institute of Advanced Industrial Science and Technology,Funai Electric Co., Ltd.
- Current Assignee Address: JP Tsukuba-shi JP Tokyo JP Daito-shi
- Agency: Crowell & Moring LLP
- Priority: JP2007-165393 20070622
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A switching element comprising: an insulative substrate; a first electrode and a second electrode provided on one surface of the insulative substrate; and an interelectrode gap which is provided between the first electrode and the second electrode, and which has a gap on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen.
Public/Granted literature
- US20080315184A1 Switching Element Public/Granted day:2008-12-25
Information query
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