Invention Grant
- Patent Title: Coaxial transistor structure
- Patent Title (中): 同轴晶体管结构
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Application No.: US13214784Application Date: 2011-08-22
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Publication No.: US08395223B2Publication Date: 2013-03-12
- Inventor: Chun-Chu Yang
- Applicant: Chun-Chu Yang
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW96139774A 20071024
- Main IPC: H01L27/105
- IPC: H01L27/105
Abstract:
The present invention discloses a coaxial transistor formed on a substrate, particularly a coaxial metal-oxide-semiconductor field-effect transistor (CMOSFET). The chips or substrates of the CMOSFETs can be stacked up and connected via through-holes to form a coaxial complementary metal-oxide-semiconductor field-effect transistor (CCMOSFET), which is both full-symmetric and full-complementarily, has a higher integration and is free of the latch-up problem.
Public/Granted literature
- US20110303986A1 COAXIAL TRANSISTOR STRUCTURE Public/Granted day:2011-12-15
Information query
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