Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12844303Application Date: 2010-07-27
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Publication No.: US08395234B2Publication Date: 2013-03-12
- Inventor: Mototsugu Okushima , Takasuke Hashimoto
- Applicant: Mototsugu Okushima , Takasuke Hashimoto
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2009-194467 20090825
- Main IPC: H01L27/08
- IPC: H01L27/08

Abstract:
A semiconductor device has: a signal pad; a power supply line; a ground line; an inductor section whose one end is connected to the signal pad; a terminating resistor connected between the other end of the inductor section and the power supply line or the ground line. The semiconductor device further has: a first ESD protection element connected to a first node in the inductor section; and a second ESD protection element connected to a second node whose position is different from that of the first node in the inductor section.
Public/Granted literature
- US20110049672A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-03-03
Information query
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