Semiconductor device

Invention Grant

US08395235B2 Semiconductor device 有权

Title translation: 半导体器件

Please log in to see more content

Patent Title: Semiconductor device
Patent Title (中): 半导体器件
Application No.: US12861219

Application Date: 2010-08-23
Publication No.: US08395235B2

Publication Date: 2013-03-12
Inventor: Keiichi Tsuchiya
Applicant: Keiichi Tsuchiya
Applicant Address: JP Tokyo
Assignee: Elpida Memory, Inc.
Current Assignee: Elpida Memory, Inc.
Current Assignee Address: JP Tokyo
Agency: Young & Thompson
Priority: JP2009-210472 20090911
Main IPC: H01L29/92
IPC: H01L29/92

Abstract:

A semiconductor device may include, but is not limited to a first electrode upwardly extending, and a second electrode upwardly extending along the first electrode. The first electrode includes a lower portion and an upper portion. The second electrode covers a bottom surface and an outer side surface of the lower portion of the first electrode. The upper portion of the first electrode is positioned higher than the second electrode.

Abstract(Chinese):

半导体器件可以包括但不限于向上延伸的第一电极和沿着第一电极向上延伸的第二电极。第一电极包括下部和上部。第二电极覆盖第一电极的下部的底面和外侧面。第一电极的上部位于第二电极的上方。

Public/Granted literature

US20110062552A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-03-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器