Invention Grant
- Patent Title: Method of manufacturing semiconductor device, and semiconductor device
- Patent Title (中): 制造半导体器件的方法和半导体器件
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Application No.: US12929664Application Date: 2011-02-07
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Publication No.: US08395238B2Publication Date: 2013-03-12
- Inventor: Kouichi Konishi
- Applicant: Kouichi Konishi
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-034228 20080215
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor device including a substrate, and an insulating film formed over the substrate, wherein the insulating film has a first contact having a rectangular geometry in a plan view, and second to fifth contacts provided respectively adjacent to the individual edges of the rectangular first contact, formed therein.
Public/Granted literature
- US20110127677A1 Method of manufacturing semiconductor device, and semiconductor device Public/Granted day:2011-06-02
Information query
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