Invention Grant
- Patent Title: Semiconductor element, semiconductor device, and fabrication method thereof
- Patent Title (中): 半导体元件,半导体器件及其制造方法
-
Application No.: US12339150Application Date: 2008-12-19
-
Publication No.: US08395258B2Publication Date: 2013-03-12
- Inventor: Junichi Ikeda
- Applicant: Junichi Ikeda
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Taft Stettinius & Hollister LLP
- Priority: JP2007-329476 20071221
- Main IPC: H01L23/482
- IPC: H01L23/482

Abstract:
Semiconductor elements and methods for fabricating semiconductor elements that allow semiconductor elements having the same function to utilize different packaging methods. An exemplary semiconductor element includes a first semiconductor element portion, including an internal circuit, electrodes electrically connected to the internal circuit, and a first insulating layer covering the internal circuit while exposing the electrodes; and a second semiconductor element portion electrically connected to the electrodes and formed on the first insulating layer, the second semiconductor element portion including a wiring layer having a first pad and a second pad, and a second insulating layer configured to cover either one of the first pad or the second pad while exposing the other one of the first pad and the second pad.
Public/Granted literature
- US20090160066A1 SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND FABRICATION METHOD THEREOF Public/Granted day:2009-06-25
Information query
IPC分类: