Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13530383Application Date: 2012-06-22
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Publication No.: US08395261B2Publication Date: 2013-03-12
- Inventor: Takekazu Tanaka , Kouhei Takahashi , Seiji Okabe
- Applicant: Takekazu Tanaka , Kouhei Takahashi , Seiji Okabe
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-038912 20070220; JP2007-337436 20071227
- Main IPC: H01L23/28
- IPC: H01L23/28

Abstract:
A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball.
Public/Granted literature
- US20120306077A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-12-06
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