Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13170662Application Date: 2011-06-28
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Publication No.: US08395266B2Publication Date: 2013-03-12
- Inventor: Kwan-Yong Lim , Min-Gyu Sung , Heung-Jae Cho
- Applicant: Kwan-Yong Lim , Min-Gyu Sung , Heung-Jae Cho
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR2005-0079535 20050829
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer, and a metal layer formed on the thin layer, wherein the thin layer increases a grain size of the metal layer.
Public/Granted literature
- US20110256388A1 METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-10-20
Information query
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