Invention Grant
- Patent Title: Methods for characterizing the behavior of microelectromechanical system devices
- Patent Title (中): 表征微机电系统设备行为的方法
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Application No.: US12242790Application Date: 2008-09-30
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Publication No.: US08395371B2Publication Date: 2013-03-12
- Inventor: Alok Govil
- Applicant: Alok Govil
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G01R23/02
- IPC: G01R23/02 ; G01R27/08

Abstract:
Various methods are described to characterize interferometric modulators or similar devices. Measured voltages across interferometric modulators may be used to characterize transition voltages of the interferometric modulators. Measured currents may be analyzed by integration of measured current to provide an indication of a dynamic response of the interferometric modulator. Frequency analysis may be used to provide an indication of a hysteresis window of the interferometric modulator or mechanical properties of the interferometric modulator. Capacitance may be determined through signal correlation, and spread-spectrum analysis may be used to minimize the effect of noise or interference on measurements of various interferometric modulator parameters.
Public/Granted literature
- US20090201009A1 METHODS FOR MEASUREMENT AND CHARACTERIZATION OF INTERFEROMETRIC MODULATORS Public/Granted day:2009-08-13
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