Invention Grant
- Patent Title: Testing device and testing method of semiconductor devices
- Patent Title (中): 半导体器件的测试装置和测试方法
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Application No.: US12606609Application Date: 2009-10-27
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Publication No.: US08395400B2Publication Date: 2013-03-12
- Inventor: Hideaki Nakamura
- Applicant: Hideaki Nakamura
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: G01R31/10
- IPC: G01R31/10

Abstract:
A testing device of semiconductor devices includes a temperature detector detecting temperatures of semiconductor devices, and a temperature control unit controlling the temperatures of the semiconductor devices based on a detected temperature, in which the temperature control unit includes thermal heads cooling or heating the semiconductor devices, solution pipes through which solutions set to different temperatures flow, and a channel switching part switching whether or not to make the solution flow through the thermal head, and when a test is conducted, the solution flown through the thermal head is switched according to heating amount of the semiconductor device.
Public/Granted literature
- US20100040107A1 TESTING DEVICE AND TESTING METHOD OF SEMICONDUCTOR DEVICES Public/Granted day:2010-02-18
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