Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US11762441Application Date: 2007-06-13
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Publication No.: US08395431B2Publication Date: 2013-03-12
- Inventor: Chen Kong Teh
- Applicant: Chen Kong Teh
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-169364 20060619
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
In a clear period, transistors NT38 and PT38 turn on and state retention nodes HQ and H/Q are cleared to an L level and an H level, respectively. In this clear period, a transistor NT21 is off. Consequently, a precharge node PS maintains itself at an H level. Thus, transistors PT31 and NT32 are off, thereby preventing a short circuit from occurring in a clear period. A short circuit is also prevented from occurring in a preset period.
Public/Granted literature
- US20070290734A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2007-12-20
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