Invention Grant
- Patent Title: Planar, monolithically integrated coil
- Patent Title (中): 平面,单片集成线圈
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Application No.: US13002152Application Date: 2009-06-30
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Publication No.: US08395472B2Publication Date: 2013-03-12
- Inventor: Freddy Roozeboom , Derk Reefman , Johan Hendrik Klootwijk , Lukas Frederik Tiemeijer , Jaap Ruigrok
- Applicant: Freddy Roozeboom , Derk Reefman , Johan Hendrik Klootwijk , Lukas Frederik Tiemeijer , Jaap Ruigrok
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Agency: Kramer & Amado P.C.
- Priority: EP08159531 20080702
- International Application: PCT/IB2009/052836 WO 20090630
- International Announcement: WO2010/001339 WO 20100107
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/28 ; H01F27/24

Abstract:
The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 μH, and must have an equivalent series resistance of less than 0.1Ω. For this reason, those inductors are always bulky components, of a typical size of 2×2×1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values.
Public/Granted literature
- US20110128111A1 PLANAR, MONOLITHICALLY INTEGRATED COIL Public/Granted day:2011-06-02
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