Invention Grant
- Patent Title: Memory array error correction apparatus, systems, and methods
- Patent Title (中): 存储器阵列纠错装置,系统和方法
-
Application No.: US13467699Application Date: 2012-05-09
-
Publication No.: US08397129B2Publication Date: 2013-03-12
- Inventor: John F. Schreck , Todd A. Dauenbaugh
- Applicant: John F. Schreck , Todd A. Dauenbaugh
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H03M13/00
- IPC: H03M13/00

Abstract:
Various embodiments include apparatus, methods, and systems that operate to extend the processes of reading, modifying, and writing data stored in or being provided to a memory array without interrupting a continual stream of data to be written into the memory array. Embodiments may include an apparatus comprising a memory array, and an error code module coupled to the memory array with a data buffer having a plurality of data burst registers operable to receive a plurality of data bursts to be written to the memory array on a corresponding plurality of consecutive clock cycles. The error code module is operable to perform a read/modify/write process on each of the plurality of data bursts within a time period no longer than a period of two consecutive cycles of the plurality of consecutive clock cycles.
Public/Granted literature
- US20120221916A1 MEMORY ARRAY ERROR CORRECTION APPARATUS, SYSTEMS, AND METHODS Public/Granted day:2012-08-30
Information query
IPC分类: