Invention Grant
- Patent Title: Substrate processing apparatus and exhaust method therefor
- Patent Title (中): 基板处理装置及其排气方法
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Application No.: US12726612Application Date: 2010-03-18
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Publication No.: US08398745B2Publication Date: 2013-03-19
- Inventor: Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
- Applicant: Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2009-068285 20090319
- Main IPC: B03C3/019
- IPC: B03C3/019 ; B03C3/36

Abstract:
A substrate processing apparatus includes a processing chamber for accommodating therein a processing target substrate; a gas exhaust path through which a gas inside the processing chamber is exhausted; one or more exhaust pumps provided in the gas exhaust path; and a scrubber for collecting harmful components from an exhaust gas. The apparatus further includes an ionized gas supply unit for supplying to the gas exhaust path an ionized gas for neutralizing charged particles included in the exhaust gas flowing therethrough.
Public/Granted literature
- US20100236406A1 SUBSTRATE PROCESSING APPARATUS AND EXHAUST METHOD THEREFOR Public/Granted day:2010-09-23
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