Invention Grant
US08398765B2 Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation
有权
使用不平衡磁场和等旋转控制生长中的硅晶体的熔体 - 固体界面形状
- Patent Title: Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation
- Patent Title (中): 使用不平衡磁场和等旋转控制生长中的硅晶体的熔体 - 固体界面形状
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Application No.: US12493766Application Date: 2009-06-29
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Publication No.: US08398765B2Publication Date: 2013-03-19
- Inventor: Hariprasad Sreedharamurthy , Milind Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
- Applicant: Hariprasad Sreedharamurthy , Milind Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Armstrong Teasdale LLP
- Main IPC: C30B15/02
- IPC: C30B15/02
Abstract:
A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.
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