Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US12271461Application Date: 2008-11-14
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Publication No.: US08398815B2Publication Date: 2013-03-19
- Inventor: Yohei Yamazawa , Naohiko Okunishi
- Applicant: Yohei Yamazawa , Naohiko Okunishi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2007-295755 20071114
- Main IPC: C23F1/00
- IPC: C23F1/00 ; C23C16/00 ; H01L21/306

Abstract:
A plasma processing apparatus includes a processing chamber, a first radio frequency power supply for outputting a first radio frequency power, the first radio frequency power supply being electrically connected to a first electrode arranged in the processing chamber, a heater power supply for supplying electric power to a heating element provided in the first electrode, first and second power supply lines for electrically interconnecting the heating element and the heater power supply, and a filter circuit provided in the first and second power supply lines for attenuating radio frequency noises coming from the heating element. The filter circuit includes a first and a second air-core coil respectively provided on the first and the second power supply line at an initial stage of the filter circuit when viewed from the heating element, the air-core coils being in a coaxial relationship with each other and having substantially the same winding length.
Public/Granted literature
- US20090133839A1 PLASMA PROCESSING APPARATUS Public/Granted day:2009-05-28
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