Invention Grant
US08398885B2 Pore-forming precursors and porous dielectric layers obtained therefrom
失效
形成孔的前体和由其获得的多孔电介质层
- Patent Title: Pore-forming precursors and porous dielectric layers obtained therefrom
- Patent Title (中): 形成孔的前体和由其获得的多孔电介质层
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Application No.: US12375207Application Date: 2007-07-30
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Publication No.: US08398885B2Publication Date: 2013-03-19
- Inventor: Manon Vautier , Etienne Sandre
- Applicant: Manon Vautier , Etienne Sandre
- Applicant Address: FR Paris
- Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee Address: FR Paris
- Agent Allen E. White
- Priority: FR0653228 20060801
- International Application: PCT/IB2007/002184 WO 20070730
- International Announcement: WO2008/015533 WO 20080207
- Main IPC: C09K3/00
- IPC: C09K3/00 ; B32B3/26

Abstract:
The invention relates to porous dielectric layers obtained from pore-forming precursors and from matrix precursors. According to the invention, the pore-forming precursors used are chosen form molecules of myrtenol, ethyl chrysanthemumate, jasmine, trimethylbenzene, their positional isomers and their substituted or hydrogenated derivatives. The dielectric constant of the layer obtained is less than or equal to 2.5, starting from matrix precursors having a dielectric constant of less than or equal to 4.
Public/Granted literature
- US20090321679A1 NOVEL PORE-FORMING PRECURSORS AND POROUS DIELECTRIC LAYERS OBTAINED THEREFROM Public/Granted day:2009-12-31
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