Invention Grant
- Patent Title: Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
- Patent Title (中): 基于新型钛，锆和铪前体形成高k电介质膜的方法及其在半导体制造中的应用
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Application No.: US12303165Application Date: 2006-06-02
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Publication No.: US08399056B2Publication Date: 2013-03-19
- Inventor: Nicolas Blasco , Christian Dussarrat
- Applicant: Nicolas Blasco , Christian Dussarrat
- Applicant Address: FR Paris
- Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney
- International Application: PCT/EP2006/062893 WO 20060602
- International Announcement: WO2007/140813 WO 20071213
- Main IPC: C23C16/40
- IPC: C23C16/40
Abstract:
A method of forming on at least one support at least one metal containing dielectric films having the formula (M11-a M2a) Ob Nc, wherein: 0≦a
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