The present invention discloses a method of forming exposure patterns. These steps of the present method comprise: a substrate is provided; a photoresist layer is formed over the substrate; subsequently, a photo mask with a pattern is placed and aligned to a corresponding location over the photoresist layer for at least double exposure processes, and the photo mask with a pattern is moved and aligned to another corresponding location over the photoresist layer during at least one exposure process; successively, at least one filter is provided to perform at least one exposure process, and the filter is placed above or below the photo mask; and the patterns with different dimensions are consequently formed on the substrate after partial photoresist is removed during a later developing process.