Invention Grant
- Patent Title: Three dimensional integration with through silicon vias having multiple diameters
- Patent Title (中): 具有多个直径的通过硅通孔的三维集成
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Application No.: US12687289Application Date: 2010-01-14
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Publication No.: US08399180B2Publication Date: 2013-03-19
- Inventor: Mukta G. Farooq , Ramona Kei , Emily R. Kinser , Anthony D. Lisi , Richard Wise , Hakeem Yusuff
- Applicant: Mukta G. Farooq , Ramona Kei , Emily R. Kinser , Anthony D. Lisi , Richard Wise , Hakeem Yusuff
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Katherine Brown
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A method is disclosed which includes patterning a photoresist layer on a substrate of a structure, removing a first portion of the photoresist layer to expose a first area of the substrate, etching the first area to form a cavity having a first depth, removing a second portion of the photoresist to expose an additional area of the substrate, and etching the cavity to expose a first conductor in the structure and the additional area to expose a second conductor in the structure.
Public/Granted literature
- US20110171582A1 Three Dimensional Integration With Through Silicon Vias Having Multiple Diameters Public/Granted day:2011-07-14
Information query
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