Invention Grant
- Patent Title: Method for laser interference lithography using diffraction grating
- Patent Title (中): 使用衍射光栅的激光干涉光刻方法
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Application No.: US12738598Application Date: 2008-10-08
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Publication No.: US08399184B2Publication Date: 2013-03-19
- Inventor: Tae-Su Kim , Jae-Jin Kim , Hyun-Woo Shin
- Applicant: Tae-Su Kim , Jae-Jin Kim , Hyun-Woo Shin
- Applicant Address: KR Seoul
- Assignee: LG Chem, Ltd.
- Current Assignee: LG Chem, Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Priority: KR10-2007-0104584 20071017
- International Application: PCT/KR2008/005892 WO 20081008
- International Announcement: WO2009/051366 WO 20090423
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method for laser interference lithography using a diffraction grating includes (a) forming a photoresist layer on a work substrate to which a repeated fine pattern is to be formed; (b) forming a refractive index matching material layer on the photoresist layer; (c) forming on the refractive index matching material layer a diffraction grating layer having a period of diffraction grating within the range from λ/ng to λ/n0 (λ is a wavelength of laser beam, ng is a refractive index of the diffraction grating, and n0 is a refractive index in the air or in vacuum); and (d) exposing the photoresist layer by means of mutual interference of positive and negative diffracted lights with the same absolute value by inputting a laser beam perpendicularly to the diffraction grating layer. This method allows to realize an interference pattern with higher resolution and to use a laser source with lower coherence.
Public/Granted literature
- US20100279233A1 METHOD FOR LASER INTERFERENCE LITHOGRAPHY USING DIFFRACTION GRATING Public/Granted day:2010-11-04
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