A method of making a semiconductor device includes providing a web substrate, forming a first semiconductor layer of a first conductivity type over the web substrate, forming a second semiconductor layer of a second conductivity type over a first side of the first semiconductor layer, forming a first electrode layer over the second semiconductor layer, forming a handle web substrate over the first electrode layer, delaminating the web substrate from the first semiconductor layer after the step of forming the handle web substrate, where at least one opening extends through the first and the second semiconductor layers, and forming a second electrode layer over a second side of the first semiconductor layer such that the first and second electrode layers are in electrical contact with each other.