Invention Grant
US08399292B2 Fabricating a semiconductor chip with backside optical vias 有权
制造具有背面光通孔的半导体芯片

Fabricating a semiconductor chip with backside optical vias
Abstract:
Fabricating a semiconductor chip with backside optical vias is provided. A silicon wafer is received for processing. The silicon wafer includes an optically transparent oxide layer on a frontside of the silicon wafer. A complementary metal-oxide-semiconductor layer is formed on top of the optically transparent oxide layer. A backside of the silicon wafer is etched to form optical vias in a silicon substrate using the optically transparent oxide layer as an etch-stop.
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