Invention Grant
- Patent Title: Semiconductor package for discharging heat and method for fabricating the same
- Patent Title (中): 用于放热的半导体封装及其制造方法
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Application No.: US13584042Application Date: 2012-08-13
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Publication No.: US08399294B2Publication Date: 2013-03-19
- Inventor: Qwan Ho Chung
- Applicant: Qwan Ho Chung
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0099260 20081009
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor package for quickly discharging heat and a method for fabricating the same are disclosed. The semiconductor package includes a semiconductor package module having a first insulation member and at least one fluid passage passing through the insulation member. Circuit patterns are formed on a first face of the first insulation member. Semiconductor chips are then disposed on the first face and are electrically connected with the circuit patterns respectively. A second insulation member is formed so as to surround the side faces of the semiconductor chips, the first insulation member, and the circuit patterns. Finally, a through electrode is formed passing through the second insulation member of the semiconductor package module and electrically connecting to the circuit patterns.
Public/Granted literature
- US20120309129A1 SEMICONDUCTOR PACKAGE FOR DISCHARGING HEAT AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-12-06
Information query
IPC分类: