Invention Grant
- Patent Title: Semiconductor device and its manufacture method
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13019509Application Date: 2011-02-02
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Publication No.: US08399295B2Publication Date: 2013-03-19
- Inventor: Sadahiro Kishii , Tsuyoshi Kanki , Yoshihiro Nakata , Yasushi Kobayashi , Masato Tanaka , Akio Rokugawa
- Applicant: Sadahiro Kishii , Tsuyoshi Kanki , Yoshihiro Nakata , Yasushi Kobayashi , Masato Tanaka , Akio Rokugawa
- Applicant Address: JP Kawasaki JP Nagano-shi
- Assignee: Fujitsu Limited,Shinko Electric Industries Co., Ltd.
- Current Assignee: Fujitsu Limited,Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Kawasaki JP Nagano-shi
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2010-023043 20100204
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L21/56

Abstract:
A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level.
Public/Granted literature
- US20110187002A1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD Public/Granted day:2011-08-04
Information query
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