Invention Grant
US08399305B2 Semiconductor device and method of forming dam material with openings around semiconductor die for mold underfill using dispenser and vacuum assist
有权
半导体装置和方法，用于使用分配器和真空辅助形成用于模具底部填充物的半导体模具周围的开口的坝材料
- Patent Title: Semiconductor device and method of forming dam material with openings around semiconductor die for mold underfill using dispenser and vacuum assist
- Patent Title (中): 半导体装置和方法，用于使用分配器和真空辅助形成用于模具底部填充物的半导体模具周围的开口的坝材料
-
Application No.: US12885831Application Date: 2010-09-20
-
Publication No.: US08399305B2Publication Date: 2013-03-19
- Inventor: Rui Huang , Seng Guan Chow , Heap Hoe Kuang
- Applicant: Rui Huang , Seng Guan Chow , Heap Hoe Kuang
- Applicant Address: SG Singapore
- Assignee: STATS ChipPac, Ltd.
- Current Assignee: STATS ChipPac, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins & Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/48
Abstract:
A semiconductor wafer contains a plurality of semiconductor die separated by saw streets. A dam material is formed over the saw streets around each of the semiconductor die. A plurality of openings is formed in the dam material. The openings in the dam material can be formed on each side or corners of the first semiconductor die. The semiconductor wafer is singulated through the dam material to separate the semiconductor die. The semiconductor die is mounted to a substrate. A mold underfill is deposited through a first opening in the dam material. A vacuum is drawn on a second opening in the dam material to cause the underfill material to cover an area between the first semiconductor die and substrate without voids. The number of second openings can be greater than the number of first openings. The first opening can be larger than the second opening.
Public/Granted literature
Information query
IPC分类:
