Invention Grant
US08399308B2 Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines
有权
用于形成具有包括选择线，位线和字线的金属化的半导体器件的方法
- Patent Title: Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines
- Patent Title (中): 用于形成具有包括选择线，位线和字线的金属化的半导体器件的方法
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Application No.: US13236000Application Date: 2011-09-19
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Publication No.: US08399308B2Publication Date: 2013-03-19
- Inventor: Young-Chul Jang , Won-Seok Cho , Jae-Hoon Jang , Soon-Moon Jung , Yang-Soo Son , Min-Sung Song
- Applicant: Young-Chul Jang , Won-Seok Cho , Jae-Hoon Jang , Soon-Moon Jung , Yang-Soo Son , Min-Sung Song
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0089316 20060914
- Main IPC: H01L21/82
- IPC: H01L21/82
Abstract:
A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.
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