Invention Grant
US08399330B2 Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor
有权
纳米线场效应晶体管，晶体管的制造方法以及包括晶体管的集成电路
- Patent Title: Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor
- Patent Title (中): 纳米线场效应晶体管，晶体管的制造方法以及包括晶体管的集成电路
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Application No.: US13477239Application Date: 2012-05-22
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Publication No.: US08399330B2Publication Date: 2013-03-19
- Inventor: Yongxun Liu , Takashi Matsukawa , Kazuhiko Endo , Shinichi Ouchi , Kunihiro Sakamoto , Meishoku Masahara
- Applicant: Yongxun Liu , Takashi Matsukawa , Kazuhiko Endo , Shinichi Ouchi , Kunihiro Sakamoto , Meishoku Masahara
- Applicant Address: JP
- Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP
- Agency: Bacon & Thomas, PLLC
- Priority: JP2008-150439 20080609
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
A manufacturing method of the nano-wire field effect transistor, comprising steps of preparing an SOI substrate having a (100) surface orientation; processing a silicon crystal layer comprising the SOI substrate into a standing plate-shaped member having a rectangular cross-section; processing the silicon crystal layer by orientation dependent wet etching and thermal oxidation into a shape where two triangular columnar members are arranged one above the other with a spacing from each other so as to face along the ridge lines of the triangular columnar members; and processing the two triangular columnar members into a circular columnar member configuring a nano-wire by hydrogen annealing or thermal oxidation.
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