Invention Grant
- Patent Title: Lanthanide dielectric with controlled interfaces
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Application No.: US13430098Application Date: 2012-03-26
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Publication No.: US08399332B2Publication Date: 2013-03-19
- Inventor: Arup Bhattacharyya
- Applicant: Arup Bhattacharyya
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02
Abstract:
Methods and devices for a dielectric are provided. One method embodiment includes forming a passivation layer on a substrate, wherein the passivation layer contains a composition of silicon, oxygen, and nitrogen. The method also includes forming a lanthanide dielectric film on the passivation layer, and forming an encapsulation layer on the lanthanide dielectric film.
Public/Granted literature
- US20120181662A1 LANTHANIDE DIELECTRIC WITH CONTROLLED INTERFACES Public/Granted day:2012-07-19
Information query
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