Invention Grant
- Patent Title: Formation of air gap with protection of metal lines
- Patent Title (中): 形成气隙，保护金属线
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Application No.: US12700792Application Date: 2010-02-05
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Publication No.: US08399350B2Publication Date: 2013-03-19
- Inventor: Takeshi Nogami , Shyng-Tsong Chen , David V. Horak , Son V. Nguyen , Shom Ponoth , Chih-Chao Yang
- Applicant: Takeshi Nogami , Shyng-Tsong Chen , David V. Horak , Son V. Nguyen , Shom Ponoth , Chih-Chao Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ira D. Blecker; Katherine S. Brown
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
Method for fabricating a microelectronic element having an air gap in a dielectric layer thereof. A dielectric cap layer can be formed which has a first portion overlying surfaces of metal lines, the first portion extending a first height above a height of a surface of the dielectric layer, and a second portion overlying the dielectric layer surface and extending a second height above the height of the surface of the dielectric layer, the second height being greater than the first height. After forming the cap layer, a mask can be formed over the cap layer. The mask exposes a surface of only the second portion of the cap layer which has the greater height. Subsequently, an etchant can be directed towards the first and second portions of the cap layer. Material can be removed from the dielectric layer where exposed to the etchant.
Public/Granted literature
- US20110193230A1 FORMATION OF AIR GAP WITH PROTECTION OF METAL LINES Public/Granted day:2011-08-11
Information query
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