Silicon oxide based low-k dielectric materials may receive superior hydrophobic surface characteristics on the basis of a plasma treatment using hydrogen and carbon containing radicals. For this purpose, the surface of the low-k dielectric material may be exposed to these radicals, at least in one in situ process in combination with another reactive plasma ambient, for instance used for patterning the low-k dielectric material. Consequently, superior surface characteristics may be established or re-established without significantly contributing to product cycle time.