Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13425508Application Date: 2012-03-21
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Publication No.: US08399361B2Publication Date: 2013-03-19
- Inventor: Kozo Makiyama
- Applicant: Kozo Makiyama
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, and a protective insulating film composed of silicon nitride, which is formed over a surface of the compound semiconductor layer and whose film density in an intermediate portion is lower than that in a lower portion.
Public/Granted literature
- US20120178226A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-07-12
Information query
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