Invention Grant
US08399833B2 Charged particle beam writing method, method for detecting position of reference mark for charged particle beam writing, and charged particle beam writing apparatus
有权
带电粒子束写入方法，用于检测带电粒子束写入的参考标记的位置的方法和带电粒子束写入装置
- Patent Title: Charged particle beam writing method, method for detecting position of reference mark for charged particle beam writing, and charged particle beam writing apparatus
- Patent Title (中): 带电粒子束写入方法，用于检测带电粒子束写入的参考标记的位置的方法和带电粒子束写入装置
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Application No.: US12722922Application Date: 2010-03-12
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Publication No.: US08399833B2Publication Date: 2013-03-19
- Inventor: Shusuke Yoshitake
- Applicant: Shusuke Yoshitake
- Applicant Address: JP Numazu-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Numazu-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-067030 20090318
- Main IPC: H01J37/244
- IPC: H01J37/244
Abstract:
The reference mark has steps and is formed on a sample. A stage moves in X and Y directions. The sample M is placed on the stage. An optical lever type height position sensor emits light to detect the reference mark FM′ by the stage being scanned. The spot position of light reflected on the sample is detected in position sensitive detector. The X and Y coordinates of the position of the stage positioned when the spot position of the reflected light is changed is detected. The detected X and Y coordinates are regarded as the position C of the reference mark FM′. The position of a phase defect D located in the sample M is specified on the basis of the position C of the reference mark FM′. The position of a portion on which writing is to be performed is determined on the basis of a relationship with the specified position of the phase defect D.
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