Invention Grant
- Patent Title: Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
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Application No.: US13567571Application Date: 2012-08-06
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Publication No.: US08399865B2Publication Date: 2013-03-19
- Inventor: Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
- Applicant: Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Hultquist, PLLC
- Agent Steven J. Hultquist; Rosa Yaghmour
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01L21/265
Abstract:
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
Public/Granted literature
- US20120313047A1 METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM Public/Granted day:2012-12-13
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