Vertical nonvolatile memory device including a selective diode

Invention Grant

US08399874B2 Vertical nonvolatile memory device including a selective diode 有权

Title translation: 包括选择二极管的垂直非易失性存储器件

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Patent Title: Vertical nonvolatile memory device including a selective diode
Patent Title (中): 包括选择二极管的垂直非易失性存储器件
Application No.: US13008007

Application Date: 2011-01-17
Publication No.: US08399874B2

Publication Date: 2013-03-19
Inventor: Cheol Seong Hwang
Applicant: Cheol Seong Hwang
Applicant Address: KR Seoul
Assignee: SNU R&DB Foundation
Current Assignee: SNU R&DB Foundation
Current Assignee Address: KR Seoul
Agency: William Park & Associates Ltd.
Main IPC: H01L29/033
IPC: H01L29/033

Vertical nonvolatile memory device including a selective diode

Abstract:

Provided are a vertical nonvolatile memory device and a method for fabricating the vertical nonvolatile memory device. The vertical nonvolatile memory device can be integrated more highly as compared with a nonvolatile memory device of the related art. In addition, since the vertical nonvolatile memory device includes a selective diode, reading errors can be prevented.

Abstract(Chinese):

提供了一种垂直非易失性存储器件和用于制造垂直非易失性存储器件的方法。与现有技术的非易失性存储器件相比，垂直非易失性存储器件可以集成得更高。此外，由于垂直非易失性存储装置包括选择二极管，因此可以防止读取错误。

Public/Granted literature

US20120181498A1 VERTICAL NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-07-19

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