A light emitting device is provided. The light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and comprising a plurality of well layers and a plurality of barrier layers, a first nitride semiconductor layer disposed between the first conductivity type semiconductor layer and the active layer, and a second nitride semiconductor layer disposed between the active layer and the second conductivity type semiconductor layer, wherein the first nitride semiconductor layer has a higher indium composition than that of at least one of the plurality of well layers.