P-type SiC semiconductor

Invention Grant

US08399888B2 P-type SiC semiconductor 有权

Title translation: P型SiC半导体

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Patent Title: P-type SiC semiconductor
Patent Title (中): P型SiC半导体
Application No.: US13127814

Application Date: 2009-11-19
Publication No.: US08399888B2

Publication Date: 2013-03-19
Inventor: Hiroaki Saitoh , Akinori Seki , Tsunenobu Kimoto
Applicant: Hiroaki Saitoh , Akinori Seki , Tsunenobu Kimoto
Applicant Address: JP Toyota-shi, Aichi-ken
Assignee: Toyota Jidosha Kabushiki Kaisha
Current Assignee: Toyota Jidosha Kabushiki Kaisha
Current Assignee Address: JP Toyota-shi, Aichi-ken
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
Priority: JP2008-296814 20081120
International Application: PCT/IB2009/007497 WO 20091119
International Announcement: WO2010/058264 WO 20100527
Main IPC: H01L29/15
IPC: H01L29/15

Abstract:

A p-type SiC semiconductor includes a SiC crystal that contains Al and Ti as impurities, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al. It is preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)≧5×1018/cm3; and 0.01%≦(Concentration of Ti)/(Concentration of Al)≦20%. It is more preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)≧5×1018/cm3; and 1×1017/cm3≦(Concentration of Ti)≦1×1018/cm3.

Abstract(Chinese):

p型SiC半导体包括含有Al和Ti作为杂质的SiC晶体，其中Ti的原子数浓度等于或小于Al的原子数浓度。优选Al的浓度和Ti的浓度满足以下关系：（Al的浓度）≥5×1018 / cm3; 和0.01％＆lt;（Ti浓度）/（Al浓度）＆nlE; 20％。更优选Al的浓度和Ti的浓度满足以下关系：（Al的浓度）≥5×1018 / cm3; 和1×1017 / cm3＆nlE;（Ti的浓度）＆nlE; 1×1018 / cm3。

Public/Granted literature

US20110210341A1 P-TYPE SiC SEMICONDUCTOR Public/Granted day:2011-09-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/12	..按其构成材料的特征区分的
H01L29/15	... · ·带有周期性或准周期性电势变化的结构，如多量子阱、超晶格（应用于光控制的这种结构入G02F1/017；应用于半导体激光器的入H01S5/34）